DIELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: TAKAHARA ATSUSHI, TAKAMATSU NARUAKI, ITO TAKAMASA, MATSUNO RYOSUKE
• Format: Patent
• Language: English; Japanese
• Published: 24.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMISTRY; COMPOSITIONS BASED THEREON; CONDUCTORS; ELECTRICITY; INSULATORS; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; THEIR PREPARATION OR CHEMICAL WORKING-UP; TREATMENT OR CHEMICAL MODIFICATION OF RUBBERS

To provide a dielectric film which is superior in low-temperature characteristic and which has rubber elasticity and shows a small hysteresis, and a method for manufacturing the dielectric film.SOLUTION: A dielectric film is to be arranged between a pair of electrode layers in a transducer. The dielectric film comprises a hydrogenated nitrile rubber that satisfies the following requirements (a)-(c). (a) The quantity of acrylonitrile is 15 mass% or more and 25 mass% or less. (b) In the hydrogenated nitrile rubber, a crosslinking group is introduced and an organic metal compound is used, and the hydrogenated nitrile rubber is crosslinked by the crosslinking group other than a carbon double bond. (c) The crosslinking density is 1.1×10-3 mol/cm3 or less.SELECTED DRAWING: None 【課題】 低温特性に優れると共に、ゴム弾性を有しヒステリシスが小さい誘電膜、およびその製造方法を提供する。【解決手段】 誘電膜は、トランスデューサにおいて一対の電極層間に介装され、以下の（ａ）〜（ｃ）を満足する水素化ニトリルゴムを有する。（ａ）アクリロニトリル量が１５質量％以上２５質量％以下である。（ｂ）架橋基が導入されており、有機金属化合物を用いて、炭素の二重結合以外の該架橋基により架橋されている。（ｃ）架橋密度が１．１×１０−３ｍｏｌ／ｃｍ３以下である。【選択図】 なし