POST-CMP CLEANING FLUID, CLEANING METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR WAFER

• Main Authors: UMEMOTO AYAKA, TAKESHITA HIROSHI, SHIBATA TOSHIAKI, KUSANO TOMOHIRO
• Format: Patent
• Language: English; Japanese
• Published: 24.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a post-CMP cleaning fluid excellent in iron compound removability and antibacterial without dissolving tungsten and to provide a cleaning method excellent in iron compound removability without dissolving tungsten.SOLUTION: The CMP cleaning fluid contains a constituent (A): antibacterial agent and a constituent (B): carboxyl group-containing amine compound. The cleaning method cleans a semiconductor wafer using post-CMP cleaning fluid. The manufacturing method for semiconductor wafer includes a process of cleaning a semiconductor wafer using the post-CMP cleaning fluid.SELECTED DRAWING: None 【課題】タングステンを溶解させることなく、鉄化合物除去性及び抗菌性に優れるＣＭＰ後洗浄液を提供する。また、タングステンを溶解させることなく、鉄化合物除去性に優れる洗浄方法を提供する。【解決手段】成分（Ａ）：抗菌剤、及び、成分（Ｂ）：カルボキシル基含有アミン化合物を含むＣＭＰ洗浄液。前記ＣＭＰ後洗浄液を用いて半導体ウェハを洗浄する洗浄方法。前記ＣＭＰ後洗浄液を用いて半導体ウェハを洗浄する工程を含む半導体ウェハの製造方法。【選択図】なし