RESISTANCE CHANGE TYPE MEMORY

To provide a resistance change type memory using a resistance change film capable of reducing a switching current.SOLUTION: A resistance change type memory 1 includes a resistance change film 14, containing germanium (Ge), reversibly changeable between a first resistance state and a second resistanc...

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Main Authors NOMURA YUKIHIRO, KAMATA YOSHIKI, KUNISHIMA IWAO, ASAO YOSHIAKI, MOROTA MISAKO
Format Patent
LanguageEnglish
Japanese
Published 24.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a resistance change type memory using a resistance change film capable of reducing a switching current.SOLUTION: A resistance change type memory 1 includes a resistance change film 14, containing germanium (Ge), reversibly changeable between a first resistance state and a second resistance state. A first film 21 containing germanium oxide is provided on a side surface of the resistance change film 14. A first electrode 13 directly or indirectly connected to a lower surface of the resistance change film 14 is provided. A second electrode 15 directly or indirectly connected to an upper surface of the resistance change film 14 is provided.SELECTED DRAWING: Figure 1 【課題】 スイッチング電流の低減化を図れる抵抗変化膜を用いた抵抗変化型メモリを提供すること。【解決手段】 実施形態の抵抗変化型メモリ１は、第１の抵抗状態と第２の抵抗状態との間を可逆的に変化可能であり、ゲルマニウム（Ｇｅ）を含む抵抗変化膜１４を含む。抵抗変化膜１４の側面には酸化ゲルマニウムを含む第１の膜２１が設けられている。抵抗変化膜１４の下面に直接又は間接的に接続する第１の電極１３が設けられている。抵抗変化膜１４の上面に直接又は間接的に接続する第２の電極１５が設けられている。【選択図】 図１
Bibliography:Application Number: JP20190049904