SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: FUJITA JUNYA, FUJITSUKA RYOTA
• Format: Patent
• Language: English; Japanese
• Published: 17.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device that can suppress the diffusion of boron while reducing the electrical resistance of a gate electrode.SOLUTION: A semiconductor device according to an embodiment includes a semiconductor substrate, a gate insulating film provided on the semiconductor substrate, a gate electrode film provided on the gate insulating film and containing boron, a side wall insulating film facing the side surface of the gate electrode film, and a barrier film that includes a first portion provided between the side surface of the gate electrode film and the side wall insulating film, and a second portion provided between the gate insulating film and the bottom surface of the side wall insulating film and connected to the first portion using a barrier film whose main component is carbon.SELECTED DRAWING: Figure 2 【課題】ゲート電極の電気抵抗を低減しつつボロンの拡散も抑制することが可能な半導体装置を提供する。【解決手段】一実施形態に係る半導体装置は、半導体基板と、半導体基板上に設けられたゲート絶縁膜と、ゲート絶縁膜上に設けられ、ボロンを含有するゲート電極膜と、ゲート電極膜の側面と対向する側壁絶縁膜と、ゲート電極膜の側面と側壁絶縁膜との間に設けられた第１部分と、ゲート絶縁膜と側壁絶縁膜の底面との間に設けられ、第１部分と接続する第２部分と、を有し、炭素を主成分とするバリア膜と、を備える。【選択図】図２