SILICON NITRIDE ETCHANT COMPOSITION

To provide a silicon nitride etchant composition which can suppress the regrowth of SiO2 after Si3 N4 selective etching with a practical etching selection ratio for SiO2, and which can suppress the pattern collapse of an SiO2 film in manufacturing a 3D nonvolatile memory cell.SOLUTION: A silicon nit...

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Bibliographic Details
Main Authors MOCHIDA KOHEI, OWADA HIROHISA, YOSHIDA YUKI
Format Patent
LanguageEnglish
Japanese
Published 10.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a silicon nitride etchant composition which can suppress the regrowth of SiO2 after Si3 N4 selective etching with a practical etching selection ratio for SiO2, and which can suppress the pattern collapse of an SiO2 film in manufacturing a 3D nonvolatile memory cell.SOLUTION: A silicon nitride etchant composition is arranged for manufacturing a 3D nonvolatile memory cell. The silicon nitride etchant composition comprises phosphoric acid, one or more kinds of silane coupling agents and water, and no ammonium ion.SELECTED DRAWING: None 【課題】３Ｄ不揮発性メモリセルの製造において、ＳｉＯ２に対する実用的なエッチング選択比をもってＳｉ３Ｎ４を選択的にエッチングした上で、ＳｉＯ２のリグロースを抑制することができ、なおかつＳｉＯ２膜のパターン倒壊を抑制する窒化ケイ素エッチング液組成物を提供する。【解決手段】３Ｄ不揮発性メモリセルを製造するための窒化ケイ素エッチング液組成物は、リン酸と１種または２種以上のシランカップリング剤と水とを含み、アンモニウムイオンを含まない。【選択図】なし
Bibliography:Application Number: JP20190041726