CHARGED PARTICLE BEAM DRAWING METHOD AND CHARGED PARTICLE BEAM DRAWING DEVICE

• Main Author: MATSUI HIDEKI
• Format: Patent
• Language: English; Japanese
• Published: 03.09.2020
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

To improve the drawing accuracy by multiple drawing while suppressing a decrease in throughput.SOLUTION: In a charged particle beam drawing method for irradiating a substrate with charged particle beam while moving the substrate to sequentially draw a pattern for each of a plurality of stripes obtained by dividing a drawing area of the substrate with the width W, for each of the stripes, a reference point of the stripe is shifted in the width direction of the stripe by a set stripe shift amount, and while switching the moving direction of the substrate, a stroke drawing process is performed S times (S is an integer of 2 or more) by setting a process of drawing the plurality of stripes with a multiplicity of 2n (n is an integer of 1 or more) as one stroke, and for each of the strokes, the reference point of the stripe in the stroke is shifted in the width direction of the stripe by a set stroke shift amount for drawing.SELECTED DRAWING: Figure 1 【課題】スループットの低下を抑制しつつ、多重描画により描画精度を向上させる。【解決手段】基板を移動させながら荷電粒子ビームを照射して、前記基板の描画領域を幅Ｗで分割した複数のストライプ毎に順次パターンを描画する荷電粒子ビーム描画方法。この方法では、ストライプ毎に、設定されたストライプずらし量で前記ストライプの幅方向に前記ストライプの基準点をずらすとともに、前記基板の移動方向を切り替えながら、多重度２ｎ（ｎは１以上の整数）で前記複数のストライプを描画する処理を１回のストロークとし、前記ストロークの描画処理をＳ回（Ｓは２以上の整数）行い、前記ストローク毎に、設定されたストロークずらし量で前記ストライプの幅方向に前記ストロークにおける前記ストライプの基準点をずらして描画する。【選択図】図１