SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME

To provide a semiconductor storage device capable of increasing a cell current.SOLUTION: The semiconductor storage device includes: a laminated body: and a columnar body. In the laminated body, a plurality of conductive layers and a plurality of insulating layers are alternately laminated in a first...

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Bibliographic Details
Main Authors HAMADA TATSUFUMI, SAOTOME SHINICHI
Format Patent
LanguageEnglish
Japanese
Published 03.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a semiconductor storage device capable of increasing a cell current.SOLUTION: The semiconductor storage device includes: a laminated body: and a columnar body. In the laminated body, a plurality of conductive layers and a plurality of insulating layers are alternately laminated in a first direction. The columnar body is provided in the laminated body. The columnar body includes: a core portion; a channel film; a tunnel oxide film; and a charge storage film, in this order from an inside. The channel film is a semiconductor in which impurities are doped in a first region in contact with the core portion.SELECTED DRAWING: Figure 5 【課題】セル電流の増加を図ることができる半導体記憶装置を提供することである。【解決手段】実施形態の半導体記憶装置は、積層体と、柱状体とを備える。前記積層体は、複数の導電層と複数の絶縁層とが第１方向に交互に積層されている。前記柱状体は、前記積層体内に設けられる。前記柱状体は、コア部とチャネル膜とトンネル酸化膜と電荷蓄積膜とを内側から順に含む。前記チャネル膜は、前記コア部に接する第１領域に不純物がドープされた半導体である。【選択図】図５
Bibliography:Application Number: JP20190034160