ARRAY SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE
To suppress changes in the characteristics of an oxide semiconductor layer caused by irradiation of the oxide semiconductor layer with visible rays or ultraviolet rays, and to suppress changes in the characteristics of a switching element including an oxide semiconductor layer made of an oxide.SOLUT...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
31.08.2020
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Subjects | |
Online Access | Get full text |
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Summary: | To suppress changes in the characteristics of an oxide semiconductor layer caused by irradiation of the oxide semiconductor layer with visible rays or ultraviolet rays, and to suppress changes in the characteristics of a switching element including an oxide semiconductor layer made of an oxide.SOLUTION: An array substrate 101 includes a transparent substrate 120, a switching element 150 and a polarizer 134. The transparent substrate has a first main surface 120a and a second main surface 120b. The second main surface is on an opposite side to the side where the first main surface is present. The switching element includes an oxide semiconductor layer 126. The switching element and the polarizer are disposed on the first main surface. The polarizer is present in an upper layer than the switching element, overlaps the switching element in a plan view in a thickness direction of the transparent substrate, and has a transmission axis extending in a direction perpendicular to the thickness direction of the transparent substrate.SELECTED DRAWING: Figure 3
【課題】可視光線又は紫外線が酸化物半導体層に照射されることに起因する酸化物半導体層の特性の変化を抑制し、酸化物からなる酸化物半導体層を備えるスイッチング素子の特性の変化を抑制する。【解決手段】アレイ基板101は、透明基板120、スイッチング素子150及び偏光子134を備える。透明基板は、第1の主面120a及び第2の主面120bを有する。第2の主面は、第1の主面がある側とは反対の側にある。スイッチング素子は、酸化物半導体層126を備える。スイッチング素子及び偏光子は、第1の主面上に配置される。偏光子は、スイッチング素子より上層にあり、透明基板の厚さ方向から平面視された場合にスイッチング素子と重なり、透明基板の厚さ方向と垂直をなす方向に延びる透過軸を有する。【選択図】図3 |
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Bibliography: | Application Number: JP20190023548 |