SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, SUBSTRATE, AND SUBSTRATE MANUFACTURING APPARATUS

• Main Authors: IIJIMA RYOSUKE, NISHIO JOJI, OTA CHIHARU
• Format: Patent
• Language: English; Japanese
• Published: 20.08.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a semiconductor device manufacturing method, a substrate manufacturing method, a semiconductor device, a substrate, and a substrate manufacturing apparatus, capable of stabilizing characteristics.SOLUTION: The semiconductor device manufacturing method includes a first step of expanding stacking faults in a first semiconductor layer, provided on a substrate containing silicon carbide, including silicon carbide and a first element containing at least one selected from a group consisting of N, P, and As. The manufacturing method includes a second step of forming a second semiconductor layer including silicon carbide and the first element on the first semiconductor layer after the first step. The manufacturing method includes a third step of forming a third semiconductor layer including silicon carbide and a second element containing at least one selected from a group consisting of B, Al, and Ga on the second semiconductor layer.SELECTED DRAWING: Figure 1 【課題】特性を安定にできる半導体装置の製造方法、基板の製造方法、半導体装置、基板、及び、基板の製造装置を提供する。【解決手段】実施形態によれば、半導体装置の製造方法は、炭化珪素を含む基体の上に設けられ、炭化珪素と、Ｎ、Ｐ及びＡｓよりなる群から選択された少なくとも１つを含む第１元素と、を含む第１半導体層の積層欠陥を拡張させる第１工程を含む。前記製造方法は、第１工程後に前記第１半導体層の上に炭化珪素と前記第１元素とを含む第２半導体層を形成する第２工程を含む。前記製造方法は、前記第２半導体層の上に、炭化珪素と、Ｂ、Ａｌ及びＧａよりなる群から選択された少なくとも１つを含む第２元素と、を含む第３半導体層を形成する第３工程を含む。【選択図】図１