SEMICONDUCTOR WAFER SURFACE PROTECTION AGENT

• Main Author: SAKANISHI YUICHI
• Format: Patent
• Language: English; Japanese
• Published: 13.08.2020
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

To provide a surface protective agent which suppresses corrosion of the surface of a semiconductor wafer by a basic compound and reduces the defects in the semiconductor wafer.SOLUTION: A semiconductor wafer surface protection agent according to the present invention includes a compound represented by the following formula (1). RO-(CHO)-H (1). (Rrepresents a hydrogen atom, a hydrocarbon group having 1 to 24 carbon atoms which may have a hydroxyl group, or a group represented by RCO, and Rrepresents a hydrocarbon group having 1 to 24 carbon atoms. n is an average degree of polymerization of the glycerin unit represented in parentheses, and is 2 to 60).SELECTED DRAWING: None 【課題】塩基性化合物により、半導体ウェハ表面が腐食するのを抑制して、半導体ウェハを低欠陥化する表面保護剤を提供する。【解決手段】本発明の半導体ウェハ表面保護剤は、下記式（１）で表される化合物を含む。Ｒ1Ｏ−（Ｃ3Ｈ6Ｏ2）n−Ｈ （１）（式中、Ｒ1は、水素原子、ヒドロキシル基を有していてもよい炭素数１〜２４の炭化水素基、又はＲ2ＣＯで表される基を示し、前記Ｒ2は炭素数１〜２４の炭化水素基を示す。ｎは括弧内に示されるグリセリン単位の平均重合度を示し、２〜６０である）【選択図】なし