SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM

• Main Authors: ENOMOTO MASASHI, YAMAUCHI TAKASHI, KAWAKAMI SHINICHIRO, MIZUNOURA HIROSHI, SANO YOHEI
• Format: Patent
• Language: English; Japanese
• Published: 06.08.2020
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

To increase the dimensional stability of a resist pattern arranged by use of a metal-containing resist.SOLUTION: A substrate processing device comprises: a film-formation processing unit 12 for forming a metal-containing resist coating film on a substrate; a heat treatment unit U8 for performing a heat treatment on the substrate which has gone through the coating film formation and an exposure process on the coating film; a development process unit U2 for performing a process for development of the coating film of the substrate subjected to the heat treatment; and an adjustment control unit 100 for reducing the difference between substrates in the amount of water which makes a reaction during the heat treatment in the coating film formed on the substrate on an individual substrate basis.SELECTED DRAWING: Figure 2 【課題】メタル含有レジストを用いたレジストパターンの寸法安定性を向上させる。【解決手段】基板処理装置は、基板にメタル含有レジストの被膜を形成する成膜処理部１２と、被膜が形成され、当該被膜に露光処理が施された基板を加熱処理する熱処理部Ｕ８と、加熱処理が施された基板の上記被膜を現像処理する現像処理部Ｕ２と、基板に形成された上記被膜内において、加熱処理の際に反応する水分量の基板ごとの差を縮小させる調整制御部１００と、を備える。【選択図】図２