COMPOUND, RESIST COMPOSITION, AND METHOD FOR PRODUCING RESIST PATTERN

To provide a compound capable of producing a resist pattern having good CD uniformity (CDU), and a resist composition containing the same.SOLUTION: The compound is represented by formula (I), and the resist composition contains the compound. [In the formula, Rrepresents a hydrocarbon group which has...

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Main Authors MUKAI YUICHI, ICHIKAWA KOJI, MASUYAMA TATSURO
Format Patent
LanguageEnglish
Japanese
Published 06.08.2020
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Summary:To provide a compound capable of producing a resist pattern having good CD uniformity (CDU), and a resist composition containing the same.SOLUTION: The compound is represented by formula (I), and the resist composition contains the compound. [In the formula, Rrepresents a hydrocarbon group which has a fluorine atom or a cyclic hydrocarbon group, provided that -CH- contained in the hydrocarbon group may be substituted with -O- or -CO-; m1 represents an integer of 1-3; Rand Reach represent a halogen atom, a fluorinated alkyl group, a nitro group, a cyano group or an alkyl group, provided that -CH- contained in the alkyl group may be substituted with -O- or -CO-; m2 represents an integer of 0-4; and m3 represents an integer of 0-4.]SELECTED DRAWING: None 【課題】良好なCD均一性(CDU)を有するレジストパターンを製造することができる化合物及びこれを含むレジスト組成物を提供することを目的とする。【解決手段】式(I)で表される化合物及びこれを含むレジスト組成物。[式中、R1は、フッ素原子又は環状炭化水素基を有する炭化水素基を表し、該炭化水素基に含まれる−CH2−は、−O−又は−CO−に置き換わっていてもよい;m1は1〜3の整数;R2及びR3は、それぞれ、ハロゲン原子、フッ素化アルキル基、ニトロ基、シアノ基又はアルキル基を表し、該アルキルに含まれる−CH2−は、−O−又は−CO−で置き換わっていてもよい;m2は0〜4の整数;m3は0〜4の整数を表す]【選択図】なし
Bibliography:Application Number: JP20200005890