SEMICONDUCTOR DEVICE

To provide an active matrix type display device in which the arrangement of a pixel electrode formed on a pixel unit, a scan line (gate line) and a data line is made to be suitable, and which has a pixel structure achieving the high opening ratio without increasing the number of masks and the number...

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Bibliographic Details
Main Author YAMAZAKI SHUNPEI
Format Patent
LanguageEnglish
Japanese
Published 30.07.2020
Subjects
ADVERTISING
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
LABELS OR NAME-PLATES
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:To provide an active matrix type display device in which the arrangement of a pixel electrode formed on a pixel unit, a scan line (gate line) and a data line is made to be suitable, and which has a pixel structure achieving the high opening ratio without increasing the number of masks and the number of steps.SOLUTION: A first wire 102 provided via a first insulation film between a semiconductor film 107 and a substrate is superimposed on the semiconductor film and is used as a light shielding film. A second insulation film used as a gate insulation film is formed on the semiconductor film, and a gate electrode 133 and a second wire 134 are formed on the second insulating film. The first and second wires intersect with each other via the first and second insulation films. A third insulation film as an interlayer dielectric is formed on the upper layer of the second wire, and a pixel electrode 147 is formed thereon. The pixel electrode can be formed in an overlapping manner on the first wire and the second wire. The area of the pixel electrode can be increased on a reflection type display device.SELECTED DRAWING: Figure 1 【課題】画素部に形成される画素電極や走査線（ゲート線）及びデータ線の配置を適したものとして、かつ、マスク数及び工程数を増加させることなく高い開口率を実現した画素構造を有するアクティブマトリクス型表示装置を提供することを目的とする。【解決手段】半導体膜１０７と基板との間に第１の絶縁膜を介して設けられた第１の配線１０２を、該半導体膜と重ねて設け、遮光膜として用いる。さらに半導体膜上にゲート絶縁膜として用いる第２の絶縁膜を形成し、当該第２の絶縁膜上にゲート電極１３３と第２の配線１３４を形成する。第１及び第２の配線は、第１及び第２の絶縁膜を介して交差する。第２の配線の上層には、層間絶縁膜として第３の絶縁膜を形成し、その上に画素電極１４７を形成する。画素電極は、第１の配線及び第２の配線とオーバーラップさせて形成することが可能であり、反射型の表示装置において画素電極の面積を大型化できる。【選択図】図１
Bibliography:Application Number: JP20200034854