DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: SONG DO KEUN, SHIN HYUN-EOK, LEE JOON GEOL, SHIN SANG WON, YANG SU KYOUNG, SOHN SANG WOO, KO KYEONG SU, KIN SHOKO, LEE DONG MIN
• Format: Patent
• Language: English; Japanese
• Published: 30.07.2020
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LABELS OR NAME-PLATES; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS

To provide a display device and manufacturing method therefor, which prevent hillocks of wiring, diffusion at an interface and the generation of undercuts in cleaning processes, and reduce generation of particles during manufacture.SOLUTION: A display device is provided, comprising a substrate, a gate line 121 disposed on the substrate, a transistor including a part of the gate line, and a light-emitting element connected to the transistor. The gate line comprises a first layer 121a containing aluminum or an aluminum alloy, a second layer 121b containing titanium nitride, and a third layer 121c containing metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride is in a range of approximately 0.2 to 0.75.SELECTED DRAWING: Figure 1 【課題】配線のヒロック、界面での拡散、および洗浄工程におけるアンダーカットの生成を防止し、製造工程中にパーティクル発生を減少させた表示装置およびその製造方法を提供する。【解決手段】基板、前記基板上に位置するゲート線１２１、前記ゲート線の一部を含むトランジスター、及び、前記トランジスターと連結された発光素子を含み、前記ゲート線は、アルミニウムまたはアルミニウム合金を含む第１層１２１ａ、窒化チタンを含む第２層１２１ｂ、及び、金属性窒化チタンを含む第３層１２１ｃを含み、前記金属性窒化チタンのＮ／Ｔｉモル比は０．２乃至０．７５である。【選択図】図１