METHOD FOR MANUFACTURING QUANTUM DOT

To provide a quantum dot manufacturing method capable of reducing an organic residue adhering especially to the surface of the quantum dot and suppressing the occurrence of blackening of a layer including the quantum dot located directly above a light-emitting element.SOLUTION: The present invention...

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Bibliographic Details
Main Authors MIYANAGA SHOJI, TOUNO YOSHIKAZU, KANAUMI EIICHI
Format Patent
LanguageEnglish
Japanese
Published 30.07.2020
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Summary:To provide a quantum dot manufacturing method capable of reducing an organic residue adhering especially to the surface of the quantum dot and suppressing the occurrence of blackening of a layer including the quantum dot located directly above a light-emitting element.SOLUTION: The present invention is directed to a method for manufacturing a quantum dot having a core/shell structure including a core part of semiconductor particles and containing a plurality of kinds of Cd, Se, S, and Zn. The method comprises a step of coating the surface of the core part with the shell part, characterized in that a quantum dot liquid containing oleylamine (OLA) and trioctylphosphine (TOP) is produced and an ultracentrifuge is used for a washing step of the quantum dot liquid thereby centrifuging the quantum dot liquid to produce a supernatant liquid and precipitated coated core and removing the supernatant liquid from the precipitated coated core.SELECTED DRAWING: Figure 2 【課題】特に量子ドット表面に付着する有機残留物を少なくでき、発光素子の直上に位置する量子ドットを含む層の黒変発生を抑制できる量子ドットの製造方法を提供することを目的とする。【解決手段】本発明は、半導体粒子のコア部を有し、Cd、Se、S、及びZnの複数種を含むコア/シェル構造の量子ドットの製造方法であって、前記コア部の表面をシェル部で被覆する工程と、を有して、オレイルアミン(OLA)及び、トリオクチルホスフィン(TOP)を含む量子ドット液を作製し、前記量子ドット液の洗浄工程に、超遠心機を用い、これにより、量子ドット液を遠心分離により、上澄み液と沈殿した被覆コアを生成し、沈殿した被覆コアから前記上澄み液を除去することを特徴とする。【選択図】図2
Bibliography:Application Number: JP20200067395