MULTILAYER SUBSTRATE AND MULTILAYER SUBSTRATE MANUFACTURING METHOD

To provide a multilayer substrate that reduces generation of delamination and reduce of a transmission, and a manufacturing method of the multilayer substrate.SOLUTION: Each of conductive layers 201 and 202 is provided on a front face of an insulation material layer 1 and comprises a penetration par...

Full description

Saved in:
Bibliographic Details
Main Authors KOMATSU MISAKI, FUKASE KATSUYA
Format Patent
LanguageEnglish
Japanese
Published 27.07.2020
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:To provide a multilayer substrate that reduces generation of delamination and reduce of a transmission, and a manufacturing method of the multilayer substrate.SOLUTION: Each of conductive layers 201 and 202 is provided on a front face of an insulation material layer 1 and comprises a penetration part. An insulation material layer 2 coats the conductive layers 201 and 202, and is laminated on the front face of the insulation material layer 1. A via hole is achieved into an inner part of at least the insulation material layer 1 so as to be penetrated into the insulation material layer 2 from the upper face of the insulation material layer 2, and is provided so as to contain the penetration part of the conductive layers 201 and 202. Each of resin vias 101 to 103 is formed so that an insulation member is filled in the via hole. An insulation material layer 3 is laminated on the upper face of the insulation material layer 2, and is integrally formed with the resin vias 101 to 103. One part of the conductive layers 201 and 202 is exposed into the via hole. The insulation member coats the upper faces of the conductive layers 201 and 202 exposed into the via hole, and coats a lower face of the conductive layers 201 and 202 exposed in the via hole via the penetration part of each of the conductive layers 201 and 202.SELECTED DRAWING: Figure 1 【課題】デラミの発生及び伝搬を低減する積層基板及び積層基板製造方法を提供する。【解決手段】導体層201及び202は、絶縁材料層1の上面に設けられ、貫通部を備える。絶縁材料層2は、導体層201及び202を被覆し、絶縁材料層1の上面に積層される。ビアホールは、絶縁材料層2の上面から絶縁材料層2を貫通して少なくとも絶縁材料層1の内部に達し、且つ、導体層201及び202の貫通部を含むように設けられる。樹脂ビア101〜103は、絶縁部材がビアホールに充填されて形成される。絶縁材料層3は、絶縁材料層2の上面に積層され、樹脂ビア101〜103と一体に形成される。導体層201及び202の一部は、ビアホール内に露出する。絶縁部材は、ビアホール内に露出する導体層201及び202の上面を被覆し、且つ、導体層201及び202の貫通部を介してビアホール内に露出する導体層201及び202の下面を被覆する。【選択図】図1
Bibliography:Application Number: JP20190002179