FILM DEPOSITION METHOD OF HARD FILM

• Main Author: SATO HIDEKI
• Format: Patent
• Language: English; Japanese
• Published: 16.07.2020
• Subjects: BORING; BROACHING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMBINED OPERATIONS; DIFFUSION TREATMENT OF METALLIC MATERIAL; FILING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOTOTHERWISE PROVIDED FOR; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; MILLING; OTHER WORKING OF METAL; PERFORMING OPERATIONS; PLANING; SAWING; SCRAPING; SHEARING; SLOTTING; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TURNING; UNIVERSAL MACHINE TOOLS

To provide a film deposition method of a hard film to improve an abrasion hardness of the hard film while a hardness of the hard film is maintained.SOLUTION: A film deposition method of a hard film uses a cathode arc type ion plating apparatus having a target therein, the target being composed of AlxCryMz (0.80≤x≤0.95,0.05≤y+z≤0.20,z≤0.05: x is an atomic ratio of Al, y is an atomic ration of Cr, and z is an atomic ratio of M. M is either of Ti, V, Zr, or Nb). A bias voltage applied to a substrate arranged in the cathode arc type ion plating apparatus is set to a range of -100 V to -150 V, and a substrate temperature is set to a range of 330°C to 370°C.SELECTED DRAWING: None 【課題】硬質皮膜の硬度を維持しつつ、硬質皮膜の耐磨耗性が向上する硬質皮膜の成膜方法を提供する。【解決手段】ＡｌｘＣｒｙＭｚ（０．８０≦ｘ≦０．９５，０．０５≦ｙ+ｚ≦０．２０，ｚ≦０．０５：ｘはＡｌの原子比率、ｙはＣｒの原子比率、ｚはＭの原子比率をそれぞれ示す。Ｍは、Ｔｉ，Ｖ，Ｚｒ，Ｎｂのうちのいずれかの元素を示す。）から成るターゲットを内部に備えるカソードアーク方式イオンプレーティング装置を用いた硬質皮膜の成膜方法において、カソードアーク方式イオンプレーティング装置内に設置する基板に対して印加するバイアス電圧を−１００Ｖ〜−１５０Ｖの範囲とし、基板の温度を３３０℃〜３７０℃の範囲とする。【選択図】なし