SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
To downsize a semiconductor device.SOLUTION: The semiconductor device includes: a substrate formed of an insulating body; a first conductor film in one surface of the substrate; a semiconductor element having a first electrode and a second electrode, the first electrode being connected to a first co...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
02.07.2020
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Subjects | |
Online Access | Get full text |
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Summary: | To downsize a semiconductor device.SOLUTION: The semiconductor device includes: a substrate formed of an insulating body; a first conductor film in one surface of the substrate; a semiconductor element having a first electrode and a second electrode, the first electrode being connected to a first conductor film; and an external connection terminal having an inner end part and an outer end part, the inner end part being located between the substrate and the semiconductor element and connected to the second electrode. The external connection terminal also has a middle part between the inner end part and the outer end part, the middle part being connected to the surface of the substrate. The distance between the middle part of the external connection terminal and the substrate is longer than between the inner end part of the external connection terminal and the substrate.SELECTED DRAWING: Figure 1
【課題】半導体装置の小型化を図る。【解決手段】半導体装置は、絶縁体で構成された基板と、基板の一表面に設けられた第1導体膜と、第1電極と第2電極とを有し、第1電極が第1導体膜に接続された半導体素子と、内端部分と外端部分とを有し、内端部分が基板と半導体素子との間に位置して第2電極に接続された外部接続端子とを備える。外部接続端子は、内端部分と外端部分との間に位置するとともに、基板の前記一表面に接合された中間部分をさらに有する。外部接続端子の中間部分と基板との間の距離は、外部接続端子の内端部分と基板との間の距離よりも大きい。【選択図】図1 |
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Bibliography: | Application Number: JP20180239949 |