SEMICONDUCTOR DEVICE

• Main Authors: AOKI TAKAAKI, SOENO AKITAKA, ARAKAWA TAKASHI, SUGIMURA ATSUSHI, TSUMA HIROKI, HISADA KENJI, SAKANE HIROKI
• Format: Patent
• Language: English; Japanese
• Published: 02.07.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a technique capable of accurately detecting breakage of a surface electrode.SOLUTION: A semiconductor device includes a semiconductor substrate and a surface electrode covering a surface of the semiconductor substrate. The surface electrode has a first metal film covering the surface of the semiconductor substrate, a second metal film covering the surface of the first metal film, a third metal film covering the surface of the second metal film, and a fourth metal film covering the surface of the third metal film. The second metal film has a Young's modulus higher than that of the first metal film and the fourth metal film. A difference between reflection factors of the fourth metal film and the third metal film is larger than a difference between the reflection factors of the fourth metal film and the second metal film.SELECTED DRAWING: Figure 1 【課題】 表面電極の欠損を精度良く検出できる技術を提供する。【解決手段】 半導体装置は、半導体基板と、半導体基板の表面を覆う表面電極を有している。表面電極が、半導体基板の表面を覆う第１金属膜と、第１金属膜の表面を覆う第２金属膜と、第２金属膜の表面を覆う第３金属膜と、第３金属膜の表面を覆う第４金属膜を有している。第２金属膜は、第１金属膜及び第４金属膜よりも高いヤング率を有している。第４金属膜の反射率と第３金属膜の反射率の差が、第４金属膜の反射率と第２金属膜の反射率の差よりも大きい。【選択図】図１