GATE DRIVE CIRCUIT

• Main Authors: SENDA YASUTAKA, YAMAUCHI KAZUTERU
• Format: Patent
• Language: English; Japanese
• Published: 18.06.2020
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRONIC CIRCUITRY; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; GENERATION; PULSE TECHNIQUE

To provide a gate drive circuit that can be configured at low cost while having two control functions of a constant voltage and a constant current with a common output element of a drive unit.SOLUTION: A gate drive signal is applied to an IGBT 1 from a DC power supply VD via a shunt resistor 2, a MOSFET 3 of a gate drive circuit 10, and a gate resistor 4. The gate drive circuit 10 includes a constant current drive circuit 20 and a constant voltage drive circuit 30, and drives and controls one MOSFET 3. The gate drive circuit 10 causes a constant current Ig to flow through the MOSFET 3 by the constant current drive circuit 20 to increase the gate voltage of the IGBT 1 at a predetermined voltage change rate. When the gate voltage of the IGBT 1 reaches a predetermined gate voltage Vg, the gate drive circuit 10 controls an output voltage Vout of an output terminal B to become a constant voltage by the constant voltage drive circuit 30.SELECTED DRAWING: Figure 1 【課題】駆動部の出力素子を共通として、定電圧および定電流の２つの制御機能を備えつつ、低コストで構成できるゲート駆動回路を提供する。【解決手段】ＩＧＢＴ１は直流電源ＶＤからシャント抵抗２、ゲート駆動回路１０のＭＯＳＦＥＴ３およびゲート抵抗４を介してゲート駆動信号が与えられる。ゲート駆動回路１０は、定電流駆動回路２０および定電圧駆動回路３０を備え、１個のＭＯＳＦＥＴ３を駆動制御する。ゲート駆動回路１０は、定電流駆動回路２０によりＭＯＳＦＥＴ３に定電流Ｉｇを流してＩＧＢＴ１のゲート電圧を所定の電圧変化率で上昇させる。ＩＧＢＴ１のゲート電圧が所定のゲート電圧Ｖｇに達すると、ゲート駆動回路１０は、定電圧駆動回路３０により出力端子Ｂの出力電圧Ｖｏｕｔを定電圧となるように制御する。【選択図】図１