ETCHANT

To provide an etchant which can increase the ratio of an etching rate of a silicon nitride film to a silicon oxide film according to an embodiment.SOLUTION: The disclosure in an embodiment relates to an etchant for a process of removing a silicon nitride film from a substrate having the silicon nitr...

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Bibliographic Details
Main Authors KITAYAMA HIROAKI, SATO KANJI, OYAMA TSUBASA, OKAZAKI SHOTA, KIMURA YOSUKE
Format Patent
LanguageEnglish
Japanese
Published 18.06.2020
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:To provide an etchant which can increase the ratio of an etching rate of a silicon nitride film to a silicon oxide film according to an embodiment.SOLUTION: The disclosure in an embodiment relates to an etchant for a process of removing a silicon nitride film from a substrate having the silicon nitride film and a silicon oxide film. The etchant comprises a liquid solution containing silica and alkali, phosphoric acid and water.SELECTED DRAWING: None 【課題】一態様において、シリコン酸化膜に対するシリコン窒化膜のエッチング速度の比を向上可能なエッチング液を提供する。【解決手段】本開示は、一態様において、シリコン窒化膜及びシリコン酸化膜を有する基板からシリコン窒化膜を除去する工程用のエッチング液であって、シリカ及びアルカリを含む溶液と、リン酸と、水とを配合してなる、エッチング液に関する。【選択図】なし
Bibliography:Application Number: JP20190146509