AMPLIFICATION CIRCUIT

To provide an amplification circuit capable of reducing a temperature dependency of a gain.SOLUTION: An amplification circuit 15 comprises: a differential circuit 53 that generates a differential current signal in accordance with a differential input signal; and a control current source 55 that supp...

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Bibliographic Details
Main Authors SUGIMOTO YOSHIYUKI, TANAKA KEIJI
Format Patent
LanguageEnglish
Japanese
Published 11.06.2020
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Summary:To provide an amplification circuit capable of reducing a temperature dependency of a gain.SOLUTION: An amplification circuit 15 comprises: a differential circuit 53 that generates a differential current signal in accordance with a differential input signal; and a control current source 55 that supplies a control current IDAC so that a transconductance of a field-effect transistor 84 becomes constant. In a variable resistance circuit 58 of the differential circuit 53, a source and a drain of a field-effect transistor 83 are electrically connected to emitters of transistors 56 and 57, respectively. A source of the field-effect transistor 84 is electrically connected to a connection point P between a resistance element 81 and a resistance element 82 connected between the emitters of the transistors 56 and 57 in series and having mutually equal resistance values. A gate of the field-effect transistor 83 and a gate and a drain of the field-effect transistor 84 are electrically connected to a control terminal TC, which receives the control current IDAC, in common.SELECTED DRAWING: Figure 1 【課題】利得の温度依存性を低減可能な増幅回路を提供すること。【解決手段】増幅回路15は、差動入力信号に応じて差動電流信号を生成する差動回路53と、電界効果トランジスタ84のトランスコンダクタンスが一定となるように制御電流IDACを供給する制御用電流源55と、を備え、差動回路53の可変抵抗回路58では、電界効果トランジスタ83のソース及びドレインがトランジスタ56,57のエミッタにそれぞれ電気的に接続され、トランジスタ56,57のエミッタの間に直列に接続された互いに等しい抵抗値を有する抵抗素子81及び抵抗素子82の接続点Pに電界効果トランジスタ84のソースが電気的に接続され、電界効果トランジスタ83のゲートと、電界効果トランジスタ84のゲート及びドレインとが、制御電流IDACを受ける制御端子Tcに共通に電気的に接続される。【選択図】図1
Bibliography:Application Number: JP20180226637