SUBSTRATE HOLDING MECHANISM AND FILM FORMING DEVICE

• Main Authors: FUJISATO TOSHIAKI, NOH HWAJUN, TORIYA DAISUKE, SUZUKI KIMITAKA, MOCHIZUKI TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 04.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; SEMICONDUCTOR DEVICES

To provide a substrate holding mechanism capable of electrostatically attracting a substrate to be processed when a conductive film is formed by plasma CVD or plasma ALD, and also to provide a film forming device using the same.SOLUTION: A substrate holding mechanism includes: a stage which is constituted of a dielectric body and supports a substrate to be processed; an attraction electrode provided in the stage; and a heater for heating the stage. The substrate to be processed is electrostatically absorbed on the surface of the stage by the Johnson-Rahbek force. The stage includes: a ring-shaped adhesion region having a function of preventing the substrate to be processed from being brought into close contact with a position corresponding to the outer periphery of the substrate to be processed on the surface of the stage and then preventing raw material gas for forming a conductive film from going around the back side of the substrate to be processed; and a groove part which is provided in an annular shape at the outer portion of the adhesion region of the surface of the stage and in which a conductive deposition film can be accumulated by the raw material gas.SELECTED DRAWING: Figure 3 【課題】プラズマＣＶＤまたはプラズマＡＬＤにより導電性膜を成膜する際に被処理基板を静電吸着することができる基板保持機構およびそれを用いた成膜装置を提供する。【解決手段】基板保持機構は、誘電体で構成され、被処理基板を支持するステージと、ステージ内に設けられた吸着電極と、ステージを加熱するヒータとを備え、ジョンソン・ラーベック力により被処理基板がステージの表面に静電吸着され、ステージは、ステージの表面の被処理基板の外周に対応する位置に、被処理基板が密着され、導電性膜を成膜するための原料ガスが前記被処理基板の裏面側に回り込むことを阻止する機能を有する環状をなす密着領域と、ステージの表面の密着領域の外側の部分に環状に設けられた、原料ガスによる導電性デポ膜が蓄積可能な溝部とを有する。【選択図】 図３