THERMISTOR FILM, THERMISTOR ELEMENT INCLUDING THERMISTOR FILM, AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: MATSUDA TOKIYOSHI, YAGYU SHINGO, IGAWA TAKUTO, SASAKI TAKAHIRO
• Format: Patent
• Language: English; Japanese
• Published: 04.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRICITY; RESISTORS

To provide a thermistor film and a thermistor element having excellent thermistor characteristics even in a high-frequency region, and a manufacturing method capable of industrially advantageously obtaining such a thermistor film and a thermistor element.SOLUTION: A method for manufacturing a thermistor element 100 includes the steps of: forming a thermistor film 50 including a crystalline oxide and having an electric resistivity less than or equal to 100 kΩcm on a first electrode 51; and forming a second electrode 52 on the side opposite to a surface on the first electrode side of the thermistor film 50. The thermistor element 100 comprises a thermistor film 50, a first electrode 51 arranged on a first surface side of the thermistor film 50, and a second electrode 52 arranged on a second surface side located on the opposite side of the first surface of the thermistor film 50.SELECTED DRAWING: Figure 1 【課題】高周波域においても良好なサーミスタ特性を有するサーミスタ膜およびサーミスタ素子並びにこのようなサーミスタ膜およびサーミスタ素子を工業的有利に得ることができる製造方法を提供する。【解決手段】サーミスタ素子１００の製造方法は、第１電極５１の上に、結晶性酸化物を含み、電気抵抗率が１００ｋΩｃｍ以下であるサーミスタ膜５０を形成する工程及びサーミスタ膜５０の第１電極側の面の反対側に、第２電極５２を形成する工程を含む。サーミスタ素子１００は、サーミスタ膜５０と、サーミスタ膜５０の第１面側に配置されている第１電極５１と、サーミスタ膜５０の第１面の反対側に位置している第２面側に配置されている第２電極５２と、を有する。【選択図】図１