FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS

• Main Author: NOSE MASAAKI
• Format: Patent
• Language: English; Japanese
• Published: 04.06.2020
• Subjects: CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; GLASS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a film deposition method and a film deposition apparatus each of which has a controlled film deposition rate and a controlled raw material ratio, and is used for uniformly forming, as a protective film, a pure material film or a mixed film of extremely thin thickness on a substrate.SOLUTION: The film deposition method performs sputtering film deposition on a substrate using an ion beam emitted from an ion source. A sputtering target is arranged between the substrate and the ion source. A film is deposited on the substrate by sputtering a surface of the sputtering target using the ion beam, the surface being on the side opposite to a surface facing the substrate.SELECTED DRAWING: Figure 3 【課題】本発明の課題は、基板上に、極めて膜厚の薄い純物質膜又は混合膜を保護膜として均質に形成するための、成膜速度及び材料比を制御した成膜方法及び成膜装置を提供することである。【解決手段】本発明の成膜方法は、基板上に、イオンソースから照射されるイオンビームによってスパッタリング成膜する成膜方法であって、前記基板と前記イオンソースの間にスパッタリングターゲットを配置し、当該スパッタリングターゲットの前記基板と対向する面とは反対側の面をイオンビームによってスパッタリングし、当該基板上に成膜することを特徴とする。【選択図】図３