SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Author: SHOYAMA TOSHIHIRO
• Format: Patent
• Language: English; Japanese
• Published: 21.05.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To improve a characteristic of a semiconductor device, reliability in particular.SOLUTION: A semiconductor device includes a semiconductor substrate having a first surface S1 and a second surface S2, and a semiconductor layer having a third surface S3 and a fourth surface S4', and the semiconductor substrate and the semiconductor layer are laminated such that the first surface and the third surface are located between the second surface and the fourth surface. In the semiconductor device, the first surface is provided with a transistor, a photoelectric conversion part is provided between the third surface and the fourth surface, a silicon compound film is provided so as to cover the second surface, the silicon compound film has a composition of SiCNOQH(x≥0, y≥0, z≥0, at least x>z or y>z, Q is an arbitrary element and w<x and w<y), and a distance D2 between the first surface and the fourth surface is larger than a distance D3 between the third surface and the silicon compound film.SELECTED DRAWING: Figure 7 【課題】半導体装置の特性、特に信頼性を向上する。【解決手段】第１面Ｓ１および第２面Ｓ２を有する半導体基板と、第３面Ｓ３および第４面Ｓ４'を有する半導体層と、を備え、前記半導体基板と前記半導体層とが、前記第２面と前記第４面との間に前記第１面と前記第３面が位置するように積層された半導体装置であって、前記第１面にトランジスタが設けられ、前記第３面および前記第４面の間に光電変換部が設けられ、前記第２面を覆うようにシリコン化合物膜を備え、前記シリコン化合物膜は、ＳｉＣｘＮｙＯｚＱｗＨv（ｘ≧０，ｙ≧０，ｚ≧０，少なくともｘ＞ｚまたはｙ＞ｚ，Ｑは任意の元素でありｗ＜ｘかつｗ＜ｙ）の組成を有し、前記第１面と前記第４面のあいだの距離Ｄ２は、前記第２面と前記シリコン化合物膜とのあいだの距離Ｄ３よりも大きい、ことを特徴とする半導体装置。【選択図】図７