DISPLAY DEVICE

• Main Authors: YOSHINO HIKARU, MORINAGA JUNICHI
• Format: Patent
• Language: English; Japanese
• Published: 21.05.2020
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; LABELS OR NAME-PLATES; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

To provide a display device equipped with an oxide semiconductor TFT, in which the occurrence of luminance unevenness caused by wiring for improving TFT characteristics (e.g., a light-shielding wiring including a portion that shields the TFT's channel region against light).SOLUTION: An active matrix substrate 10 of the display device comprises a substrate and a pixel TFT 11 supported on the principal surface side of the substrate. The pixel TFT is a top gate structure TFT comprising an oxide semiconductor layer 11o including a channel region and a gate electrode 11g electrically connected to gate wiring GL and arranged on the oxide semiconductor layer via a gate insulating layer. The active matrix substrate further includes a light-shieling wiring LsL provided between the substrate and the oxide semiconductor layer and given a prescribed potential. The light-shielding wiring includes a channel light-shielding part LP1 for shielding the channel region of the oxide semiconductor layer against light and a non-superimposed part including a portion extending in a first direction D1 and not overlapping the gate wiring.SELECTED DRAWING: Figure 4 【課題】酸化物半導体ＴＦＴを備えた表示装置において、ＴＦＴ特性を向上させるための配線（例えばＴＦＴのチャネル領域を遮光する部分を含む遮光性配線）に起因する輝度むらの発生を抑制する。【解決手段】表示装置のアクティブマトリクス基板１０は、基板と、基板の主面側に支持された画素ＴＦＴ１１は、チャネル領域を含む酸化物半導体層１１ｏと、ゲート配線ＧＬに電気的に接続され、酸化物半導体層上にゲート絶縁層を介して配置されたゲート電極１１ｇとを有するトップゲート構造ＴＦＴである。アクティブマトリクス基板は、基板と酸化物半導体層との間に設けられ所定の電位を与えられる遮光性配線ＬｓＬをさらに有する。遮光性配線は、酸化物半導体層のチャネル領域を遮光するチャネル遮光部ＬＰ１と、第１方向Ｄ１に延びる部分を含み、且つ、ゲート配線に重ならない非重畳部とを含む。【選択図】図４