POWER CONVERSION DEVICE

• Main Authors: OGAWA TAKASHI, SAKURAI NAOKI
• Format: Patent
• Language: English; Japanese
• Published: 07.05.2020
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRONIC CIRCUITRY; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; GENERATION; PULSE TECHNIQUE

To estimate a temperature of a semiconductor device on the basis of a temporal change of a gate voltage of the semiconductor device without using a temperature sensor.SOLUTION: A power conversion device comprises: a plurality of MOSFET 1a and MOSFET 1b including a MOS gate structure controlling current; a plurality of current sensors 16 which measure a load current of a load connected to each MOSFET; a gate driving circuit which controls a switching operation of each MOSFET; a gate voltage temporal change measuring circuit which measures temporal changes of gate voltage at each MOSFET switching operation; a memory 15 which stores temperature dependence information indicating a relationship between the temporal changes of gate voltage at each MOSFET switching operation and a temperature of each MOSFET in association with the load current; and an arithmetic circuit which references the temperature dependence information stored in the memory and estimates at least one temperature of the plurality of MOSFETs on the basis of the load current measured by the current sensor and measurement results of the gate voltage temporal change measuring circuit.SELECTED DRAWING: Figure 1 【課題】温度センサを用いることなく、半導体デバイスのゲート電圧の時間変化を基に半導体デバイスの温度を推定する。【解決手段】電力変換装置は、電流を制御するＭＯＳゲート構造を有する複数のＭＯＳＦＥＴ１ａ、１ｂと、各ＭＯＳＦＥＴに接続される負荷の負荷電流を測定する複数の電流センサ１６と、各ＭＯＳＦＥＴのスイッチング動作を制御するゲート駆動回路と、各ＭＯＳＦＥＴのスイッチング動作時におけるゲート電圧の時間変化を測定するゲート電圧時間変化測定回路と、各ＭＯＳＦＥＴのスイッチング動作時におけるゲート電圧の時間変化と各ＭＯＳＦＥＴの温度との関係を示す温度依存性情報を負荷電流に関連づけて記憶するメモリ１５と、電流センサの測定による負荷電流とゲート電圧時間変化測定回路の測定結果を基に、メモリに記憶された温度依存性情報を参照し、複数のＭＯＳＦＥＴのうち少なくとも一つの温度を推定する演算回路と、を有する。【選択図】図１