SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY, PHOTOELECTRIC CONVERSION DEVICE, MOVING BODY, PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR MEMORY MANUFACTURING METHOD

• Main Authors: YAMAZAKI KAZUO, KATO TATSUNORI, TAKADA HIDEAKI, ISHII RYUNOSUKE, SUZUKI ATSUSHI, IWATA KOICHIRO, OTANI AKIRA, OSETO AKIRA, WATANABE TAKANORI
• Format: Patent
• Language: English; Japanese
• Published: 30.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To improve transistor characteristics.SOLUTION: A semiconductor device includes a first conductivity type first transistor and a second conductivity type second transistor, and the first transistor is arranged in an active region of a semiconductor substrate, has a portion where a gate electrode and an active region overlap in a plan view, and is located between the source and the drain of the first transistor of the semiconductor substrate. In the channel width direction, the impurity concentration of the second conductivity type is higher in the end portion than that in the central portion side of the portion.SELECTED DRAWING: Figure 3 【課題】 トランジスタの特性を改善する。【解決手段】 第１導電型の第１トランジスタと、第２導電型の第２トランジスタを含む半導体装置であって、第１トランジスタは半導体基板の活性領域に配され、平面視においてゲート電極と活性領域とが重畳し、かつ半導体基板の第１トランジスタのソースおよびドレインの間に位置する部分を有する。チャネル幅方向において、第２導電型の不純物濃度は部分の中央部側より端部で高い。【選択図】 図３