METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: TAKAHAGI SATOSHI, KADOGUCHI TAKUYA
• Format: Patent
• Language: English; Japanese
• Published: 23.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

To prevent scattering of a solder droplet due to rupture of a void.SOLUTION: A method of manufacturing a semiconductor element comprises a first reflow process and a second reflow process. At the first reflow process, a solder material is molten and resolidified under a first pressure lower than an atmospheric pressure to form a solder film on a first component. At the second reflow process, the solder film is molten and resolidified under a second pressure equal to or less than the first pressure to join the first component to a second component by solder.SELECTED DRAWING: Figure 4 【課題】 ボイドの破裂によってはんだの飛沫が飛散することを防止する。【解決手段】 半導体素子の製造方法は、第１リフロー工程と第２リフロー工程とを備える。第１リフロー工程では、大気圧よりも低い第１圧力下においてはんだ材を溶融及び再凝固させることにより、第１部品上にはんだ膜を形成する。第２リフロー工程では、第１圧力以下である第２圧力下においてはんだ膜を溶融及び再凝固させることにより、第１部品を第２部品にはんだ接合する。【選択図】図４