METAL FILM FORMING METHOD

• Main Authors: ODA SHINYA, HITORA TOSHIMI
• Format: Patent
• Language: English; Japanese
• Published: 16.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a metal film forming method capable of filming a metal film excellent in adhesion industrially advantageously, and a metal film formed by the method.SOLUTION: A metal film forming method for forming a metal film on a substrate, comprises: an atomizing step of atomizing a material solution, which is prepared by dissolving or dispersing a metal into an organic solvent containing an oxidizer, a chelate agent or a protonic acid, to generate a mist; a carrier gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist into the substrate by the carrier gasses; and a metal film forming step of causing the mist to thermally react thereby to laminate the metal film partially or wholly on the substrate surface.SELECTED DRAWING: Figure 1 【課題】密着性に優れた金属膜を工業的有利に成膜できる金属膜の形成方法およびその方法により形成された金属膜を提供する。【解決手段】基体上に金属膜を形成する金属膜形成方法であって、酸化剤、キレート剤またはプロトン酸を含む有機溶媒中に、金属を溶解または分散させてなる原料溶液を霧化してミストを発生させる霧化工程と、キャリアガスを前記ミストに供給するキャリアガス供給工程と、前記キャリアガスによって前記ミストを前記基体へ供給するミスト供給工程と、前記ミストを熱反応させて、前記基体表面の一部または全部に前記金属膜を積層する金属膜形成工程とを含む金属膜形成方法。【選択図】図１