METHOD OF MANUFACTURING DEVICE AND DEVICE

• Main Authors: TAKAHASHI HIROSHI, SHOJI REIJIRO, UMEBAYASHI HIROSHI
• Format: Patent
• Language: English; Japanese
• Published: 09.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

To provide a semiconductor device that can achieve high performance, mass productivity and cost reduction.SOLUTION: A semiconductor device comprises: a first semiconductor substrate that has a transfer Tr, a reset Tr and an amplification Tr arranged on a pixel array; and a second semiconductor substrate that has a logic circuit processing signals. The first semiconductor substrate and the second semiconductor substrate are laminated so that a first multilayer wiring layer and a second multilayer wiring layer are opposed to each other. At least one or more wirings at a side closest to the second semiconductor substrate of the first multilayer wiring layer and at least one or more wirings at a side closest to the first semiconductor substrate of the second multilayer wiring layer are directly bonded with each other.SELECTED DRAWING: Figure 3 【課題】高性能化、且つ量産性、コスト低減を図った半導体装置を提供する。【解決手段】画素アレイに配置された、転送Ｔｒ、リセットＴｒ、及び、増幅Ｔｒを有する第１の半導体基板と、信号処理を行うロジック回路を有する第２の半導体基板とを有する。第１の半導体基板と第２の半導体基板とは、第１の多層配線層と第２の多層配線層とが向かい合うように積層され、第１の多層配線層の最も第２の半導体基板側の少なくとも１つ以上の配線と、第２の多層配線層の最も第１の半導体基板側の少なくとも１つ以上の配線とが直接接合されている。【選択図】図３