SEED CRYSTAL FOR IRON GALLIUM ALLOY SINGLE CRYSTAL GROWTH

• Main Authors: OKANO KATSUHIKO, TAISHI TOSHINORI, HOSHIKAWA KEIGO
• Format: Patent
• Language: English; Japanese
• Published: 02.04.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a seed crystal for a FeGa alloy single crystal growth capable of reducing polycrystallization by preventing melting of a side face, even if a raw material melt flows into the side face of the seed crystal during growth of the single crystal.SOLUTION: Concerning a seed crystal for an iron gallium alloy single crystal growth, the seed crystal includes an iron gallium alloy single crystal, and a first iron film for enclosing and coating a side face of the iron gallium alloy single crystal, in which the iron gallium alloy single crystal is exposed from a contact face in contact with a raw material melt.SELECTED DRAWING: Figure 1 【課題】単結晶の育成時に種結晶の側面へ原料融液が流れ込んだとしても、側面の融解を防止して多結晶化を低減できるＦｅＧａ合金単結晶育成用種結晶を提供する。【解決手段】鉄ガリウム合金単結晶育成用種結晶であって、鉄ガリウム合金単結晶と、前記鉄ガリウム合金単結晶の側面を周回して被覆する第１鉄膜と、を備え、原料融液と接触する接触面は、前記鉄ガリウム合金単結晶が露出している、種結晶。【選択図】図１