METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

• Main Authors: MURAMOTO EIJI, HASHIZUME KENJI, NIKI NOBUYOSHI
• Format: Patent
• Language: English; Japanese
• Published: 26.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a method for manufacturing a semiconductor element capable of reducing a manufacturing cost by simplifying processes.SOLUTION: According to one embodiment of the present invention, a method for manufacturing a semiconductor element comprises: a first preparing step of preparing a structure including a semiconductor laminate and provided on a surface of a first recess; a first forming step of forming a first rough surface part rougher than other portions of the surface in at least a part of the surface in the first recess of the structure; a second forming step of forming a first metal layer on a surface side of the structure; a second preparing step of preparing a substrate provided with a second metal layer; and a joining step of heating the first metal layer and the second metal layer facing each other, melting and joining the first metal layer and the second metal layer, and pouring the melt first metal layer into the first recess.SELECTED DRAWING: Figure 6B 【課題】工程を簡素化し、製造コストを低減できる半導体素子の製造方法を提供する。【解決手段】本発明の一態様によれば、半導体素子の製造方法は、半導体積層体を備え、第１凹部が表面に設けられた構造体を準備する第１準備工程と、前記構造体の前記第１凹部内の前記表面の少なくとも一部に、前記表面の他の部分よりも粗い第１粗面部を形成する第１形成工程と、前記構造体の前記表面側に第１金属層を形成する第２形成工程と、第２金属層が設けられた基板を準備する第２準備工程と、前記第１金属層と前記第２金属層を対向させた状態で加熱し、前記第１金属層と前記第２金属層を溶融させて接合させるとともに、前記第１凹部内へ溶融した前記第１金属層を流し込む接合工程と、を備える。【選択図】図６Ｂ