SEMICONDUCTOR DEVICE

• Main Authors: WATANABE NAOTAKE, MIZUTANI ASAMI, SEKIYA HIRONORI, TADA NOBUMITSU, ITO HIROAKI, ICHIKURA YUTA, KURI YUUJI, IIO HISATAKA, TASHIRO SHOTA
• Format: Patent
• Language: English; Japanese
• Published: 12.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device which has excellent rupture prevention performance during short circuit current with a structure without using pressure-welding.SOLUTION: A semiconductor device includes a plurality of semiconductor element modules connected in parallel. Each of the semiconductor element modules SM1a and SM1b has at least one planar semiconductor element 40. A metallic member 20 in contact with one surface of the semiconductor element 40, a second metallic member 30 in contact with the other surface of the semiconductor element 40, and the semiconductor element 40 are laminated. A metallic reinforcing member 50 is provided to surround upper and lower sides in a lamination direction of the laminated metallic member 20, semiconductor element 40 and metallic member 30. The metallic member 30 and the metallic reinforcing member 50 are connected through a connection conductor 90. The connection conductor 90 has electrical resistivity larger than that of the second metallic member 30 or the metallic reinforcing member 50. A second connection conductor 95 connected to the metallic reinforcing member 50 has electrical resistivity larger than the metallic member 20 or the second metallic member 30.SELECTED DRAWING: Figure 9 【課題】圧接を用いない構造で、短絡電流時の破裂防止性能が優れた半導体装置を提供する。【解決手段】半導体装置は、並列接続された複数の半導体素子モジュールを備える。半導体素子モジュールＳＭ１ａ、ＳＭ１ｂは、板状の半導体素子４０を少なくとも１つ備える。半導体素子４０の一面と接する金属部材２０と半導体素子４０の他面と接する第２金属部材３０と半導体素子４０とを積層する。金属強化部材５０は、積層される金属部材２０、半導体素子４０及び金属部材３０の積層方向の上下を囲むように設けられる。金属部材３０と金属強化部材５０とは、接続導体９０を介して接続される。接続導体９０は、第２金属部材３０ないし金属強化部材５０より電気抵抗率の大きい。金属強化部材５０に接続される第２接続導体９５は、金属部材２０ないし第２金属部材３０よりも電気抵抗率が大きい。【選択図】図９