METHOD FOR PRODUCING RESIST FILM

• Main Authors: YAEGASHI HIDETAMI, KOIKE KYOHEI, YAMATO MASATOSHI, YAMADA KAZUKI
• Format: Patent
• Language: English; Japanese
• Published: 12.03.2020
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

To produce a resist film with a high absorption rate of EUV light and high shape stability.SOLUTION: A method for producing a resist film has a lamination step and an infiltration step. In the lamination step, a resist film is laminated on an etching object film to prepare a treatment object. In the infiltration step, the treatment object is exposed to a gas of a precursor containing a metal with a higher absorption rate of EUV light than carbon, to infiltrate the resist film with metal.SELECTED DRAWING: Figure 1 【課題】ＥＵＶ光の吸収率が高く、かつ、形状の安定性が高いレジスト膜を製造する。【解決手段】レジスト膜の製造方法は、積層工程と、浸潤工程とを含む。積層工程では、エッチング対象膜の上にレジスト膜が積層されることにより被処理体が作成される。浸潤工程では、被処理体が、炭素よりもＥＵＶ光の吸収率が高い金属を含有する前駆体のガスに晒されることにより、レジスト膜に金属を浸潤させる。【選択図】図１