VERTICAL RESONANCE TYPE SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME

• Main Authors: SUMITOMO TAKAMICHI, FUJII KEI, ARIKATA SUGURU
• Format: Patent
• Language: English; Japanese
• Published: 05.03.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; DEVICES USING STIMULATED EMISSION; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a vertical resonance type surface emitting laser having an active layer having a low carbon concentration.SOLUTION: A vertical resonance type surface emitting laser 11 includes: an active layer 19 including a quantum well structure MQW having one or a plurality of well layers 19a including a III-V compound semiconductor containing indium as a group III constituent element; an upper stacked region 23 including a carbon dopant; and a substrate 13 on which a post 15 including the active layer and the upper stacked region is mounted. The active layer is provided between the upper stacked region and the substrate. The quantum well structure has carbon concentration of 2×10cmor less. The upper stacked region includes an indium pile-up PUINP at a location away from the active layer.SELECTED DRAWING: Figure 1 【課題】低い炭素濃度の活性層を有する垂直共振型面発光レーザを提供する。【解決手段】垂直共振型面発光レーザ１１は、ＩＩＩ族構成元素としてインジウムを含むＩＩＩ−Ｖ化合物半導体を備える一又は複数の井戸層１９ａを有する量子井戸構造ＭＱＷを備える活性層１９と、炭素ドーパントを含む上部積層領域２３と、活性層及び上部積層領域を含むポスト１５を搭載する基板１３と、を備え、活性層は、上部積層領域と基板との間に設けられ、量子井戸構造は、２×１０１６ｃｍ−３以下の炭素濃度を有し、上部積層領域は、活性層から離れた位置にインジウムのパイルアップＰＵＩＮＰを含む。【選択図】図１