SEMICONDUCTOR LASER MODULE

• Main Author: NAGASHIMA YASUAKI
• Format: Patent
• Language: English; Japanese
• Published: 05.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

To provide a semiconductor laser module capable of materializing a high light-emission efficiency and a high output with a simple configuration.SOLUTION: The semiconductor laser module comprises: a semiconductor laser 10 in which an n-type semiconductor substrate, an active layer that emits light by injection of a drive current, and an n-type clad layer and a p-type clad layer that sandwich the active layer in a layer thickness direction are laminated and formed between a p-electrode and an n-electrode for injecting the drive current to the active layer; a package 17 storing the semiconductor laser 10; and an optical fiber 11 connected to the package 17 and configured to guide light emitted from an LR end surface to the exterior of the package 17. The n-electrode of the semiconductor laser 10 and a cathode terminal 18b of the package 17 are electrically connected with each other via a plurality of wires 47 wired in the n-electrode. The plurality of wires 47 are wired in the n-electrode within a range from a position of the LR end surface to a length of 2/10 to 6/10 of the whole length of the active layer.SELECTED DRAWING: Figure 2 【課題】簡単な構成で高い発光効率及び高出力が得られる半導体レーザモジュールを提供する。【解決手段】ｎ型半導体基板と、駆動電流の注入により光を発生させる活性層と、活性層を層厚方向に挟むｎ型クラッド層及びｐ型クラッド層とが、活性層に駆動電流を注入するためのｐ電極及びｎ電極の間に積層形成された半導体レーザ１０と、半導体レーザ１０を格納するパッケージ１７と、パッケージ１７に接続され、ＬＲ端面から出射される光をパッケージ１７の外部に導くための光ファイバ１１と、を備え、半導体レーザ１０のｎ電極と、パッケージ１７のカソード端子１８ｂとは、ｎ電極に配線された複数のワイヤ４７を介して電気的に接続され、複数のワイヤ４７は、ＬＲ端面の位置から活性層の全長の２／１０〜６／１０の長さの範囲においてｎ電極に配線される。【選択図】図２