PARTICULATE MATTER DETECTION SENSOR ELEMENT

To provide a particulate matter detection sensor element which can improve temperature cycle resistance and improve oxidation resistance.SOLUTION: The particulate matter detection sensor element comprises an insulating substrate having a detection surface, a plurality of conductors for detection whi...

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Bibliographic Details
Main Authors ITO YASUTAKA, KIMATA TAKEHITO, YAMAMOTO MASAHIRO, USHIDA TAKESHI, NAKAMURA TOMOYOSHI
Format Patent
LanguageEnglish
Japanese
Published 05.03.2020
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Summary:To provide a particulate matter detection sensor element which can improve temperature cycle resistance and improve oxidation resistance.SOLUTION: The particulate matter detection sensor element comprises an insulating substrate having a detection surface, a plurality of conductors for detection which are formed on the insulating substrate, and a heater unit formed in the insulating substrate. The conductor for detection includes a detection electrode part 31, a terminal part and a connecting part 32. Of the conductor for detection, a region including a detection electrode part 31 is constituted by a noble metal conductor 3A which is composed mainly of at least one or more noble metals selected from Pt, Au, Pd, Rh, and Ir. At least a part of the connecting part 32 is constituted by a low expansion conductor 3B composed mainly of a low expansion coefficient metal having a coefficient of linear expansion smaller than those of noble metals. The noble metal conductor 3A and the low-expansion conductor 3B are joined together on an insulating layer constituting the insulating substrate by an overlapping part 35 where they partly overlap each other in a direction normal to the insulating layer.SELECTED DRAWING: Figure 5 【課題】耐温度サイクル性の向上と耐酸化性の向上との両立を図ることができる粒子状物質検出センサ素子を提供すること。【解決手段】粒子状物質検出センサ素子は、検出面を有する絶縁基体と、絶縁基体に形成された複数の検出用導体と、絶縁基体に形成されたヒータ部と、を有する。検出用導体は、検出電極部31と端子部と連結部32とを有する。検出用導体のうち、検出電極部31を含む部位は、Pt、Au、Pd、Rh、Irから選ばれる少なくとも一種以上の貴金属を主成分とする貴金属導体3Aにて構成されている。連結部32の少なくとも一部は、貴金属よりも線膨張係数が小さい低膨張率金属を主成分とする低膨張導体3Bにて構成されている。貴金属導体3Aと低膨張導体3Bとは、絶縁基体を構成する絶縁層上において、絶縁層の法線方向に、部分的に互いに重なり合った重複部35によって接合されている。【選択図】図5
Bibliography:Application Number: JP20180159629