PHOTOELECTRIC CONVERSION ELEMENT

• Main Author: HATTORI SHIGEKI
• Format: Patent
• Language: English; Japanese
• Published: 27.02.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a photoelectric conversion element having a photoelectric conversion material layer that exhibits high responsiveness in a long wavelength region of near infrared rays and has sufficiently suppressed responsiveness to a visible light region having a lower wavelength than the near infrared rays.SOLUTION: In a photoelectric conversion element 2, a transparent substrate 10, a second electrode 20, an electron transport layer 18, a photoelectric conversion material layer 16, a hole transport layer 14, and a first electrode 12 are laminated in this order, and the photoelectric conversion material layer 16 includes a specific squarylium-based compound having a maximum absorption wavelength of 700 to 1200 nm, and the average transmittance of the photoelectric conversion material layer 16 for light having a wavelength of 400 to 600 nm is 60% or more.SELECTED DRAWING: Figure 2 【課題】近赤外線の長波長域に高い応答性を示し、それよりも低波長の可視光領域への応答性が充分に抑制された光電変換材料層を備える光電変換素子を提供することを目的とする。【解決手段】透明基板１０、第２電極２０、電子輸送層１８、光電変換材料層１６、正孔輸送層１４及び第１電極１２がこの順に積層され、光電変換材料層１６が、最大吸収波長が７００〜１２００ｎｍである特定のスクアリリウム系化合物を含有し、光電変換材料層１６の波長４００〜６００ｎｍの光に対する平均透過率が６０％以上である、光電変換素子２。【選択図】図２