CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM DRAWING METHOD

• Main Authors: NAKAYAMA TAKAHITO, NISHIMURA RIEKO, WATANABE TATEKI, ISHIKAWA HIROO, TAKAHASHI MASAZUMI
• Format: Patent
• Language: English; Japanese
• Published: 20.02.2020
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

To reduce deviation of a drawing position of a beam.SOLUTION: A charged particle beam lithography apparatus comprises: a stage on which a substrate of a drawing object is mounted and which can be moved; a drawing part that draws a pattern on a surface of a substrate mounted onto the stage moving by using a charged particle beam; a measurement part that measures a height distribution of the substrate mounted on the stage in rest; a correction part that adds a height fluctuation of the substrate on the basis of a moving speed of the stage to a substrate surface height of a drawing position calculated by the height distribution of the substrate to correct the substrate surface height at the drawing position; and a control part that adjusts a focal position of the charged particle beam on the basis of the substrate surface height at the drawing position.SELECTED DRAWING: Figure 1 【課題】ビームの描画位置のずれを低減する。【解決手段】本発明の一態様による荷電粒子ビーム描画装置は、描画対象の基板が載置される移動可能なステージと、荷電粒子ビームを用いて、移動している前記ステージ上に載置される基板の表面にパターンを描画する描画部と、静止している前記ステージ上に載置された基板の高さ分布を測定する測定部と、前記基板の高さ分布から求まる描画位置の基板表面高さに、前記ステージの移動速度に基づく基板の高さ変動を加算して、描画位置における基板表面高さを補正する補正部と、前記描画位置における補正された基板表面高さに基づいて、前記荷電粒子ビームの焦点位置を調整する制御部と、を備える。【選択図】図１