MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

• Main Authors: UETA SHUNSAKU, HARADA MAKOTO, TAKAOKA HIROKI
• Format: Patent
• Language: English; Japanese
• Published: 20.02.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a manufacturing method of a silicon carbide single crystal capable of suppressing generation of a macro defect.SOLUTION: A seed crystal having a first principal plane and a second principal plane on the opposite side to the first principal plane, and a pedestal are prepared. Silicon is detached from the first principal plane, to thereby form a carbon layer. A protective film containing carbon is formed on the carbon layer. In the state where the first principal plane is arranged oppositely to the pedestal, the seed crystal is fixed to the pedestal. A silicon carbide single crystal is grown on the second principal plane.SELECTED DRAWING: Figure 3 【課題】マクロ欠陥の発生を抑制可能な炭化珪素単結晶の製造方法を提供する。【解決手段】第１主面と第１主面の反対側にある第２主面とを有する種結晶と、台座とが準備される。第１主面において珪素を脱離させることで炭素層が形成される。炭素層上に炭素を含む保護膜が形成される。第１主面が台座に対向するように配置された状態で、種結晶が台座に固定される。第２主面において炭化珪素単結晶を成長させる。【選択図】図３