MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

• Main Authors: UETA SHUNSAKU, HARADA MAKOTO, TAKAOKA HIROKI
• Format: Patent
• Language: English; Japanese
• Published: 20.02.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a manufacturing method of a silicon carbide single crystal capable of suppressing generation of a macro defect.SOLUTION: A seed crystal having a first principal plane having a center, and a second principal plane on the opposite side to the first principal plane, a pedestal having a planar third principal plane, and a stationary member, are prepared. The first principal plane is curved protrusively so that the center is positioned on the opposite side to the second principal plane, to a least square plane of the first principal plane. The second principal plane has a central part, and a periphery enclosing the central part. Further, in the state where the first principal plane is arranged oppositely to the third principal plane, the stationary member is allowed to abut on the periphery, to thereby fix the seed crystal to the pedestal. A silicon carbide single crystal is grown on the second principal plane.SELECTED DRAWING: Figure 3 【課題】マクロ欠陥の発生を抑制可能な炭化珪素単結晶の製造方法を提供する。【解決手段】中心を有する第１主面と第１主面の反対側にある第２主面とを有する種結晶と、平面状の第３主面を有する台座と、固定部材とが準備される。第１主面は、中心が第１主面の最小二乗平面に対して第２主面と反対側に位置するように凸状に湾曲している。第２主面は、中央部と、中央部を取り囲む外周部とを有している。さらに、第１主面が第３主面に対向するように配置された状態で固定部材を外周部に当てることにより、種結晶が台座に固定される。第２主面において炭化珪素単結晶を成長させる。【選択図】図３