LASER ANNEALING DEVICE, THIN FILM TRANSISTOR, LASER ANNEALING METHOD, AND MASK

• Main Authors: MATSUMOTO TAKAO, ETANI KOICHI, SHINOZUKA AKIHIRO, TANAKA MASAKAZU, NODERA NOBUTAKE, KOIWA SHINJI
• Format: Patent
• Language: English; Japanese
• Published: 06.02.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a laser annealing device that can suppress a current value between the source and the drain of a thin film transistor from being different depending on the direction of a current, a thin film transistor, a laser annealing method, and a mask.SOLUTION: A laser annealing device includes a mask having an opening row in which openings each having an opening area are arranged in the scanning direction, and a substrate is irradiated with laser light through the opening, and a first opening having a first opening region and a second opening having a second opening region are adjacent to each other along a direction parallel to the scanning direction, and the second opening region includes a first opening row that is displaced from a region corresponding to the first opening region in the second opening in a direction orthogonal to the scanning direction and includes two opening regions opposed to each other with the region interposed therebetween.SELECTED DRAWING: Figure 5 【課題】薄膜トランジスタのソース−ドレイン間の電流値が電流の方向によって異なることを抑制することができるレーザーアニール装置、薄膜トランジスタ、レーザーアニール方法及びマスクを提供する。【解決手段】開口領域を有する開口部がスキャン方向に沿って列設された開口列を有するマスクを備え、開口部を介してレーザー光を基板に照射するレーザーアニール装置であって、第１の開口領域を有する第１の開口部と、第２の開口領域を有する第２の開口部とがスキャン方向と平行な方向に沿って隣り合っており、第２の開口領域が、第２の開口部での第１の開口領域に対応する領域からスキャン方向と直交する方向へ変位し、当該領域を間にして対向する二つの開口領域を含む第１の開口列を有する。【選択図】図５