SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE SAME

• Main Authors: CHEON HWAN-SUNG, NA YOONG-HEE, CHAE SEUNGYONG, MOON KYUNG SOO, NAMGUNG RAN, KIM JAE-HYUN
• Format: Patent
• Language: English; Japanese
• Published: 06.02.2020
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORGANIC CHEMISTRY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

To provide a semiconductor resist composition that is excellent in etch resistance and sensitivity and easy to handle, and a method of forming patterns using the same.SOLUTION: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by the chemical formula 1 in the figure and a solvent, and to a method of forming patterns using the composition. In the chemical formula 1, R2 to R4 are each independently -ORa or -OC(=O)Rb.SELECTED DRAWING: None 【課題】エッチング耐性および感度に優れ、取り扱いが容易な半導体レジスト用組成物ならびにこれを用いたパターン形成方法を提供する。【解決手段】下記化学式１で表される有機金属化合物および溶媒を含む半導体レジスト用組成物、ならびにこれを用いたパターン形成方法：上記化学式１中、Ｒ２〜Ｒ４は、それぞれ独立して、−ＯＲａまたは−ＯＣ（＝Ｏ）Ｒｂである。【選択図】なし