SENSOR DEVICE, SENSOR MODULE, AND PRESSURE DETECTION METHOD

To solve the problem of a conventional pressure detection circuit using a FET, that a sensor device including the pressure detection circuit cannot be downsized due to significant effects of parasitic capacitance.SOLUTION: A sensor device 60 comprises: a bipolar transistor 66 to which is inputted a...

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Bibliographic Details
Main Authors AKAMA HIROSHI, KANEHIRA HIRONORI, KAWAMATA KAZUTO, SATO KATSUNORI
Format Patent
LanguageEnglish
Japanese
Published 06.02.2020
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Summary:To solve the problem of a conventional pressure detection circuit using a FET, that a sensor device including the pressure detection circuit cannot be downsized due to significant effects of parasitic capacitance.SOLUTION: A sensor device 60 comprises: a bipolar transistor 66 to which is inputted a current charged into a pressure sensor 30; a bias resistor for outputting a current from a power supply 63 between the pressure sensor 30 and the bipolar transistor 66; a bipolar transistor 67 for constituting a current mirror circuit with the bipolar transistor 66; a discharge diode 65 for prompting a discharge from the pressure sensor 30; a reference capacitor Cx charged with a current flowing in the bipolar transistor 67; and a computation circuit 64 for detecting that the pressure sensor 30 is pressed, on the basis of a change of a period due to the fact that the reference capacitor Cx is charged until the potential of a detection-side terminal that is the connecting point of the bipolar transistor 67 and the reference capacitor Cx reaches a prescribed threshold.SELECTED DRAWING: Figure 4 【課題】FETを用いた従来の感圧検出回路は、寄生容量の影響が大きいため、感圧検出回路を含むセンサ装置を小型化することができなかった。【解決手段】センサ装置60は、感圧センサ30に充電される電流が入力されるバイポーラトランジスタ66と、感圧センサ30とバイポーラトランジスタ66との間に電源63からの電流を出力するバイアス抵抗と、バイポーラトランジスタ66とカレントミラー回路を構成するバイポーラトランジスタ67と、感圧センサ30からの放電を促す放電ダイオード65と、バイポーラトランジスタ67を流れる電流により充電される参照用コンデンサCxと、参照用コンデンサCxが充電されることにより、バイポーラトランジスタ67と参照用コンデンサCxの接続点である検出側端子の電位が所定の閾値に達するまでの期間の変化に基づいて、感圧センサ30が押圧されたことを検出する演算回路64と、を備える。【選択図】図4
Bibliography:Application Number: JP20180143313