VERTICAL RESONANCE TYPE SURFACE EMITTING LASER

• Main Authors: YOSHIMOTO SUSUMU, SUMITOMO TAKAMICHI, FUJII KEI, ARIKATA SUGURU
• Format: Patent
• Language: English; Japanese
• Published: 30.01.2020
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

To provide a vertical resonance type surface emitting laser capable of reducing fluctuations in emission characteristics with time.SOLUTION: A vertical resonance type surface emitting laser includes an active layer having a quantum well structure, a first laminate for a first distributed Bragg reflector, and a first spacer region disposed between the active layer and the first laminate. A barrier layer of the quantum well structure comprises a first compound semiconductor containing aluminum as a group III constituent element; the first spacer region comprises a second compound semiconductor having a larger aluminum composition than that of the first compound semiconductor; the first laminate, a first portion of the first spacer region, a second portion of the first spacer region and the active layer are successively arranged in a direction of a first axis; the concentration of a first dopant in the first laminate is larger than the concentration of the first dopant in the first portion of the first spacer region; and the concentration of the first dopant in the first portion of the first spacer region is larger than the concentration of the first dopant in the second portion of the first spacer region.SELECTED DRAWING: Figure 1 【課題】経時的な発光特性変動を低減できる垂直共振型面発光レーザを提供する。【解決手段】垂直共振型面発光レーザは、量子井戸構造の活性層と、第１分布ブラッグ反射器のための第１積層体と、活性層と第１積層体との間に設けられた第１スペーサ領域を備え、量子井戸構造の障壁層は、ＩＩＩ族構成元素としてアルミニウムを含む第１化合物半導体を含み、第１スペーサ領域は、第１化合物半導体よりも大きいアルミニウム組成を有する第２化合物半導体を含み、第１積層体、第１スペーサ領域の第１部分、第１スペーサ領域の第２部分、及び活性層は、第１軸の方向に順に配列され、第１積層体における第１ドーパントの濃度は、第１スペーサ領域の第１部分における第１ドーパントの濃度より大きく、第１スペーサ領域の第１部分における第１ドーパントの濃度は、第１スペーサ領域の第２部分における第１ドーパントの濃度より大きい。【選択図】図１