FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS

• Main Author: KADOTA TAICHI
• Format: Patent
• Language: English; Japanese
• Published: 23.01.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a film deposition method capable of reducing particles adhering to a substrate.SOLUTION: A film deposition method includes: a film deposition step where each of multiple types of reaction gases is stored in a storage part 61, 62, pressure-raised, and discharged into a process vessel 1 from the storage part 61, 62 in order while a counter gas is continuously fed from a gas feed system having a counter gas feed passage 51, a titanium chloride feed passage 52, an ammonia feed passage 53, and a counter gas feed passage 54; and a purge step of repeating a plurality of times an operation of storing a purge gas in the storage part 61, 62, raising the pressure to a pressure higher than the pressure at a time of pressure rise of the corresponding storage part 61, 62 at the film deposition step, and discharging from the storage part 61, 62 to the process vessel 1. A rate of counter gas fed to within the process vessel 1 at the purge step is smaller than a rate of the counter gas fed to within the process vessel at the film deposition step.SELECTED DRAWING: Figure 2 【課題】基板に付着するパーティクルを低減することができる成膜方法の提供。【解決手段】カウンターガス供給路５１、塩化チタン供給路５２、アンモニア供給路５３、及びカウンターガス供給路５４を有するガス供給系から、カウンターガスを連続的に供給しながら、複数種類の反応ガスの各々を、貯留部６１，６２に貯留して昇圧した後、貯留部６１，６２から処理容器１内に吐出する動作を順番に行う成膜工程と、貯留部６１，６２にパージガスを貯留して成膜工程における対応する貯留部６１，６２の昇圧時の圧力よりも高い圧力に昇圧し、貯留部６１，６２から処理容器１内に吐出する動作を複数回繰り返すパージ工程と、を有し、パージ工程において処理容器１内に供給するカウンターガスの流量は、成膜工程において処理容器１内に供給するカウンターガスの流量よりも小さい成膜方法。【選択図】図２