LIMITING ADJUSTMENT OF POLISHING RATES DURING SUBSTRATE POLISHING

• Main Authors: DOMINIC J BENVEGNU, HARRY Q LEE, SIVAKUMAR DHANDAPANI, BENJAMIN CHERIAN
• Format: Patent
• Language: English; Japanese
• Published: 16.01.2020
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

To provide a method of controlling polishing capable of improving the overall polishing precision for substrates.SOLUTION: The control method includes polishing a region of a substrate at a first polishing rate, measuring a sequence of characterizing values for the region of the substrate during the polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of multiple adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is longer than a period between the adjustment times, and the projected time is before the polishing endpoint time. The second polishing rate is the first polishing rate as adjusted by the polishing rate adjustment.SELECTED DRAWING: Figure 4 【課題】基板についての全体的な研磨精度を改善することができる研磨の制御方法を提供する。【解決手段】制御方法は、第一の研磨速度で基板の領域を研磨することと、研磨中に基板の領域についての一連の特徴値を、インシトゥ（その場）モニタシステムで測定することと、研磨終点時間より前の複数の調整時間の各々について研磨速度調整を決めることと、研磨パラメータを調整して、基板を第二の研磨速度で研磨することと、を含む。期間は、調整時間と調整時間の間の周期より長く、計画された時間は、研磨終点時間より前である。第二の研磨速度は、研磨速度調整によって調整された第一の研磨速度である。【選択図】図４