MANUFACTURING METHOD OF EPITAXIAL SILICON WAFER

• Main Authors: YAMAMOTO JUN, MATSUDA SHINYA
• Format: Patent
• Language: English; Japanese
• Published: 09.01.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a manufacturing method of an epitaxial silicon wafer, capable of reducing a carbon concentration in an epitaxial film.SOLUTION: In a manufacturing method of an epitaxial silicon wafer for forming an epitaxial film onto a front surface of the silicon wafer in a reactor divided into an upper space and a lower space with a susceptor on which the silicon wafer is mounted regarded as a border, the upper space and the lower space being communicated via a prescribed gap, a gas flow of a process gas flowing in a lateral direction is formed along an upper surface of the silicon wafer in the upper space in the reactor, and a gas flow of a main purge gas flowing to an upstream toward the susceptor from a downstream of the susceptor is formed in the lower space. When the flow rate of the process gas flowing through the upper space is 100, a ratio of the flow rate of the main purge gas flowing through the lower space is 1.0 to 1.5, and at least an air pressure in the upper space is controlled so as to be in ±0.2 kPa.SELECTED DRAWING: Figure 1 【課題】エピタキシャル膜中のカーボン濃度を低減することのできるエピタキシャルシリコンウェーハの製造方法を提供する。【解決手段】シリコンウェーハが載置されるサセプタを境に上部空間と下部空間とに区画され、前記上部空間と下部空間とが所定の隙間を介して連通される反応炉内において、前記シリコンウェーハの表面に、エピタキシャル膜を形成するエピタキシャルシリコンウェーハの製造方法であって、前記反応炉内の上部空間には、シリコンウェーハの上面に沿って横方向に流れるプロセスガスの気流を形成しつつ、前記下部空間には、前記サセプタの下方から該サセプタに向かって上方へ流れるメインパージガスの気流を形成し、前記上部空間に流れるプロセスガスの流量を１００とした場合、前記下部空間を流れるメインパージガス流量の比を１．０〜１．５とし、少なくとも前記上部空間の気圧を大気圧±０．２ｋＰａ内に制御する。【選択図】図１